- 表面反應(yīng)
- 界面反應(yīng)
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surface reaction中文什么意思
例句與用法
- A study on electrochemical corrosion of surface reaction of pyrite in high alkali environment
高堿環(huán)境中黃鐵礦表面反應(yīng)的腐蝕電化學(xué)研究 - The surface reaction of water atomized 304l austenitic stainless steel powder during sintering has been studied
摘要研究了水霧化奧氏體不銹鋼粉末在致密時(shí)的表面化學(xué)反應(yīng)。 - The experiments show an room temperature in the course of reactive sputtering conduces to restraining the surface reaction between hf02 and si layer ; 2 . we studied different surface progress . comparable with conventional method , the surface with nh4f cleaning step have superior thermal stability with hfo2 , nh4f cleaning step is introduced can reduces leakage current and eot ; 3
柵泄漏電流的減小可歸于氧空位缺陷的減小，即高的濺射氧氣氛和氧氣氛退火有助于減小hfo _ 2柵介質(zhì)中的氧空位缺陷； 4 )研究了反應(yīng)濺射制備的hfo _ 2柵介質(zhì)漏電流機(jī)制及其silc效應(yīng)。 - Xrd and sem analysis showed that the main composition of the white substance which formed in cracks is caco3 , which can block cracks and is probably the main cause of self - sealing . two processes which called surface reaction process and diffuse reaction process are defined in the formation process of caco3 . the phenomenons in self - sealing experiment can be explained by those two processes
對(duì)試件裂縫中沉積的白色物質(zhì)做sem 、 xrd分析得出其成份主要為caco _ 3 ， caco _ 3堵塞裂縫應(yīng)該是引起自愈現(xiàn)象的主要原因； caco _ 3的生成包括表面反應(yīng)和擴(kuò)散反應(yīng)兩個(gè)階段，這在一定程度上解釋了自愈現(xiàn)象先快后慢和自愈幅度砂漿混凝土凈漿。 - The properties of cn thin films such as their morphology , component , crystal structure and the bonding structure and the relation between those properties and the gas - phase reaction parameters were discussed , showing that the deposition of p - c3n4 thin film is the compete result of various reaction processes in the dynamics balance conditions ; the process of cn films depo sition is diagnosed in situ through the optical emission spectra technique , , the effects of experimental parameters on the concentration of the precursors and the gas - phase reactions in the plasma have been obtained ; the main reaction precursors for film deposition identified ; the relation between the characteristics of cn thin films and the reaction process in the plasma is analyzed . the cn thin films deposition under different substrate temperatures in high pressure pe - pld shows that the si atom of the substrate has participated the cn films growth process , based on this the growth mode of cn thin films on the si substrate is proposed . the further experiment of cn thin films deposition on si substrate scratched by diamond as well as covered with fe catalyzer has been attempted , which indicates that changing the dynamics conditions of the surface reaction can alter the growth characteristic of the cn thin films and can enhance obviously the films growth rate
采用pld技術(shù)進(jìn)行了碳氮化合物薄膜沉積，得到了含氮量為21at的cn薄膜；研究了襯底溫度和反應(yīng)氣體壓強(qiáng)對(duì)薄膜結(jié)構(gòu)特性的影響，給出了cn薄膜中n含量較小、 sp ~ 3鍵合結(jié)構(gòu)成分較少和薄膜中僅含有局域cn晶體的原因；引入脈沖輝光放電等離子體增強(qiáng)pld的氣相反應(yīng)，給出了提高薄膜晶態(tài)sp ~ 3鍵合結(jié)構(gòu)成分和薄膜的含n量可行性途徑；應(yīng)用pe - cvd技術(shù)以ch _ 4 + n _ 2為反應(yīng)氣體并引入輔助氣體h _ 2 ，得到了含n量為56at的晶態(tài)cn薄膜；探討了cn薄膜形貌、成分、晶體結(jié)構(gòu)、價(jià)鍵狀態(tài)等特性及其與氣體壓強(qiáng)和放電電流的關(guān)系，證明了- c _ 3n _ 4薄膜沉積為滿足動(dòng)力學(xué)平衡條件的各種反應(yīng)過(guò)程的競(jìng)爭(zhēng)結(jié)果；采用光學(xué)發(fā)射譜技術(shù)對(duì)cn薄膜生長(zhǎng)過(guò)程進(jìn)行了實(shí)時(shí)診斷，得到了實(shí)驗(yàn)參量對(duì)等離子體中活性粒子相對(duì)濃度和氣相反應(yīng)過(guò)程的影響規(guī)律，給出了cn薄膜沉積的主要反應(yīng)前驅(qū)物，揭示了cn薄膜特性和等離子體內(nèi)反應(yīng)過(guò)程之間的聯(lián)系；采用高氣壓pe - pld技術(shù)研究了不同襯底溫度條件下cn化合物薄膜的結(jié)構(gòu)特性，揭示了si原子對(duì)薄膜生長(zhǎng)過(guò)程的影響，給出了si基表面碳氮薄膜的生長(zhǎng)模式；在金剛石研磨和催化劑fe處理的si襯底上進(jìn)行cn薄膜沉積，證明了通過(guò)控制材料表面動(dòng)力學(xué)條件可以改變碳氮薄膜結(jié)構(gòu)特性，并可顯著提高晶態(tài)碳氮材料的生長(zhǎng)速率。